Nanostructural and nanochemical investigation of luminescent photoelectrochemically etched porous n-type silicon
نویسندگان
چکیده
Porous silicon obtained on n-type silicon by photoelectrochemical etching in HF, is formed of a macroporous silicon layer beneath a nanoporous silicon layer. Microstructural investigations and chemical analysis at the aiomic level of the nanoporous silicon film (obtained from a highly doped (Ill) oriented Si substrate) have been done by high resolution transmission electron microscopy (HRTEM) and electron
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